LIBS Info: Element Analysis

Title Authors Material Detector Spectrometer Software
Detection of interstitial oxygen contents in Czochralski grown silicon crystals using internal calibration in laser-induced breakdown spectroscopy (LIBS) Dibyendu Mukherjee, Robert W. Standley, Patrick A. Taylor, Seyyed Ali Davari Silicon Andor ICCD Andor Shamrock 500i
Laser: Nd:YAG
Gate Delay: 3.500us
Gate Width: Noneus
Silicon wafers are analysed for their Oxygen content (a by product of the growth process). 20 cleaning laser pulses were used before 50 accumulation/analysis shots. The samples were analysed under an atmosphere of 6 lpm He/2 lpm Ar.
Element Detection Limit (ppm) Wavelength (nm) Other Wavelengths (nm) Calibration Method Calibration Range (ppm) Notes
O 8.0000 (Calibration Curve Slope) 777.1900 N/A Univariate 0.0000-17.0000 Best response was obtained using a ratio of the O peak at 777.19nm to the Si peak at 781nm (second order of 390.55nm)

Element RMSE (ppm) Wavelength (nm) Calibration Method Notes