LIBS Info: Element Analysis
| Title | Authors | Material | Detector | Spectrometer | Software |
|---|---|---|---|---|---|
| Detection of interstitial oxygen contents in Czochralski grown silicon crystals using internal calibration in laser-induced breakdown spectroscopy (LIBS) | Dibyendu Mukherjee, Robert W. Standley, Patrick A. Taylor, Seyyed Ali Davari | Silicon | Andor ICCD | Andor Shamrock 500i | |
| Laser: | Nd:YAG 1064.0000nm 200.0000mJ 10.000Hz |
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| Gate Delay: | 3.500us | ||||
| Gate Width: | Noneus | ||||
| Silicon wafers are analysed for their Oxygen content (a by product of the growth process). 20 cleaning laser pulses were used before 50 accumulation/analysis shots. The samples were analysed under an atmosphere of 6 lpm He/2 lpm Ar. | |||||
| Element | Detection Limit (ppm) | Wavelength (nm) | Other Wavelengths (nm) | Calibration Method | Calibration Range (ppm) | Notes |
|---|---|---|---|---|---|---|
| O | 8.0000 (Calibration Curve Slope) | 777.1900 | N/A | Univariate | 0.0000-17.0000 | Best response was obtained using a ratio of the O peak at 777.19nm to the Si peak at 781nm (second order of 390.55nm) |
| Element | RMSE (ppm) | Wavelength (nm) | Calibration Method | Notes |
|---|